Abstract

Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10-4 cm2/device. The memory was not sensitive to SEL, SEU or MBUs.

Single Event Effect Assessment of a 1-Mbit Commercial MRAM

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